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| PD - 93997 IRF5806 HEXFET(R) Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86m@VGS = -4.5V 147m@VGS = -2.5V ID -4.0A -3.0A Description New trench HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. D 1 6 A D D 2 5 D G 3 4 S T o p V ie w Micro6TM TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -4.0 -3.3 -16.5 2.0 1.3 0.02 20 -55 to + 150 Units V A W W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 62.5 Units C/W www.irf.com 1 10/04/00 IRF5806 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.45 6.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.011 47.1 67.5 --- --- --- --- --- --- 8.3 1.2 2.6 6.2 27 94 126 594 114 87 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 86 VGS = -4.5V, ID = -4.0A m 147 VGS = -2.5V, ID = -3.0A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -4.0A -15 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 11.4 ID = -4.0A --- nC VDS = -16V --- VGS = -4.5V 9.3 VDD = -10V, VGS = -4.5V 41 ID = -1.0A ns 140 RG = 6.0 190 RD = 10 --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 116 90 -2.0 A -16.5 -1.2 174 135 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square Copper board, t 10sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF5806 100 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP VGS -7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 10 10 -1.50V -1.50V 1 1 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -4.0A R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 TJ = 25 C 10 1.0 TJ = 150 C 0.5 1 1.0 V DS = -15V 20s PULSE WIDTH 1.5 2.0 2.5 3.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5806 1000 -VGS , Gate-to-Source Voltage (V) 800 VGS Ciss Crss Coss = 0V, f = 1MHz = Cgs + Cgd , Cds SHORTED = Cgd = Cds + Cgd 10 ID = -4.0A VDS = -16V 8 C, Capacitance (pF) 600 Ciss 6 400 4 200 Coss Crss 1 10 100 2 0 0 0 4 8 12 16 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) -ID , Drain Current (A) I 10us 10 100us 10 TJ = 150 C 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5806 5.0 VDS 4.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 3.0 VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF5806 R DS ( on ) , Drain-to-Source On Resistance ( ) R DS(on) , Drain-to -Source On Resistance ( ) 0.20 0.20 0.16 0.15 0.12 VGS = -2.5V 0.10 ID = -4.0A 0.08 VGS = -4.5V 0.04 0.05 0.00 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 0.00 0 5 10 15 20 -I D , Drain Current ( A ) -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F QGS VG QGD VGS -3mA IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF5806 Package Outline Micro6TM TM 3 .0 0 (.1 1 8 ) 2 .8 0 (.1 1 1 ) LE AD A SS IG N MEN T S -B D D S R EC O MME N D E D FO O T PR IN T 2 X 0. 9 5 (.0 3 7 5 ) 6 X (1 .06 (.0 4 2 ) 1 .7 5 (.0 6 8 ) 1 .5 0 (.0 6 0 ) -A - 6 1 5 2 4 3 3 .00 (.1 1 8 ) 2 .60 (.1 0 3 ) 6 1 5 2 4 3 2 .20 (.0 8 7 ) 0.9 5 ( .0 3 7 5 ) 2X 0 .1 5 6X D 0 .5 0 (.0 19 ) 0 .3 5 (.0 14 ) D G 6 X 0 .6 5 (. 02 5 ) (.0 06 ) M C A S B S 0 -1 0 1 .30 (.0 5 1 ) 0 .90 (.0 3 6 ) -C 0 .1 5 (.0 0 6 ) M A X. 1 .45 (.0 5 7 ) 0 .90 (.0 3 6 ) 0 .1 0 (.0 0 4 ) 6 SU R F A C E S O O 6X 0 .2 0 (.0 0 7 ) 0 .0 9 (.0 0 4 ) 0 .6 0 (.0 2 3 ) 0 .1 0 (.0 0 4 ) NO TES : 1 . D IM E NS IO N IN G & T O L E R A N C IN G P E R A NS I Y 1 4 .5 M -1 98 2 . 2 . C O NT R O L L IN G D IM E NS IO N : M IL L IM E T E R . 3 . D IM E NS IO N S A R E S HO W N IN M IL L IM E T E R S (IN C H E S ). Part Marking Information Micro6TM TM E X A M P L E : T H IS IS A N IR L M S 6 7 0 2 PA RT N U MBE R DATE CODE WORK W EEK 01 02 03 04 Y EA R 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K W O RK W E EK 27 28 29 30 W A B C D YEAR 2 001 2 002 2 003 2 004 2 005 1 996 1 997 1 998 1 999 2 000 Y 1 2 3 4 5 6 7 8 9 0 W A B C D TOP W AFE R LO T NUMBER CO DE B OT TO M P A R T N U M B E R E X AM P L E S : 2 A = IR L M S 1 9 0 2 2 B = IR L M S 1 5 0 3 2 C = IR L M S 6 7 0 2 2 D = IR L M S 5 7 0 3 D ATE C O DE EXA M PLES: YW W = 9 6 03 = 6 C YW W = 9 6 32 = F F 24 25 26 X Y Z 50 51 52 X Y Z W O R K W E EK = (1 -2 6 ) IF P R E C E D ED B Y L AS T D IG IT O F C A LE N D E R Y EA R W O R K W E E K = ( 2 7 -5 2 ) IF P R E C E D E D B Y A L E T T E R www.irf.com 7 IRF5806 Tape & Reel Information Micro6TM TM 8mm 4mm F E E D D IR E C T IO N N O TE S : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 17 8.00 ( 7 .0 08 ) MAX. 9.9 0 ( .39 0 ) 8.4 0 ( .33 1 ) NO TES: 1. C O N T R O L LIN G D IM E N S IO N : M ILLIM ET E R . 2. O U T L IN E C O N F O R M S TO E IA -4 81 & E IA -541 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice.10/00 8 www.irf.com |
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